Type-II WS ₂ /AsP van der Waals heterojunctions with high rectification ratio and high detectivity

Runmeng Jia; Tingting Guo; Yifei Wang; Yuhai Lin; Cheng Zhu; Ahmad Farhan; Jing Xu; Banqin Ruan; Aidi Zhang; Xiang Chen; Zhi Li; Xiufeng Song; Haibo Zeng

doi:10.1039/d4tc02728k

journal article·2024

Type-II WS ₂ /AsP van der Waals heterojunctions with high rectification ratio and high detectivity

Runmeng Jia, Tingting Guo, Yifei Wang, Yuhai Lin, Cheng Zhu, Ahmad Farhan, Jing Xu, Banqin Ruan, Aidi Zhang, Xiang Chen, Zhi Li, Xiufeng Song, Haibo Zeng

Journal of Materials Chemistry C· Volume 12· Issue 38

Publisher page

Source abstract

Abstract

The WS ₂ /AsP vdWHs device with a type-II band structure suppresses dark currents and improves photoelectric characteristics. It boasts a detectivity of 1.72 × 10 ¹³ jones and a responsivity of 14.6 A W ⁻¹ , showing great potential in future applications.

Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Energy Harvesting in Wireless Networks

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China

Engineering Research Center of Functional Polymer Membrane Materials of Jiangsu Province, Nanjing Bready Advanced Materials Technology Co., Ltd, No. 8 Baoding Road, Nanjing 211103, People's Republic of China

Funding

Natural Science Foundation of Jiangsu Province · National Natural Science Foundation of China

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