journal article·2024Open access

Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterning

Lorenzo Mino, Valentina Bonino, Andrea Alessio, Federico Picollo, Andrei Kuncser, Ionel Mercioniu, Aurel-Mihai Vlaicu, Petre Badica, Rosaria Brescia, Matteo Fretto, Kalle Goss, Regina Dittmann, Marco Truccato

Journal of Materials Chemistry C· Volume 12· Issue 29

Abstract

We tuned the oxygen content in a Ta/TiO 2 /Pt memristive device at the nanoscale by a synchrotron X-ray nanobeam. We obtained a conductive filament of oxygen vacancies in the desired position in the material to achieve a controlled resistive switching.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, Interdepartmental Centre NIS, University of Torino, via P. Giuria 7, Torino, Italy, 10125, Italy

European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, BP 220, 38043 Grenoble Cedex 9, France

Department of Physics, University of Torino, Interdepartmental Centre NIS, via P. Giuria 1, Torino, Italy, 10125, Italy

National Institute of Materials Physics, Street Atomistilor 405A, Magurele, Ilfov, 077125, Romania

Electron Microscopy Facility, Italian Institute of Technology (IIT), Via Morego 30, Genova, 16163, Italy

Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce 91, 10135, Torino, Italy

Peter Gruenberg Institute – Electronic Materials (PGI-7), Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany

Funding

Ministero dell'Università e della Ricerca · Deutsche Forschungsgemeinschaft

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