Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy
Source abstract
Abstract
Original approach to detect and quantify carbon atoms located in different chemical states in SiGeC films using X-ray photoelectron spectroscopy.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Semiconductor materials and devices · X-ray Spectroscopy and Fluorescence Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
STMicroelectronics, 850 rue Jean Monnet, Crolles 38926, France
Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP, Grenoble 38000, France
References (27)
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