Experimental evidence of wide bandgap in triclinic (001)-oriented Sn 5 O 2 (PO 4 ) 2 thin films on Y 2 O 3 buffered glass substrates
Source abstract
Abstract
Sn 5 O 2 (PO 4 ) 2 is a promising p-type transparent semiconducting oxide. The bandgap of the triclinic Sn 5 O 2 (PO 4 ) 2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction.
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Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Felix Bloch Institute for Solid State Physics
Universität Leipzig
Leipzig 04103
Germany
Department of Chemistry
Key Laboratory of Polar Materials and Devices (MOE), and Department of Electronics
School of Ophthalmology & Optometry
Fraunhofer Institute for Microstructure of Materials and Systems IMWS
Halle (Saale) 06120
Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie
Funding
Japan Society for the Promotion of Science
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