Selective gas phase pulsed etching of oxides with NbCl 5
Source abstract
Abstract
NbCl 5 was found to be a highly selective vapor phase etchant for Ta 2 O 5 , TiO 2 and ZrO 2 . The mechanism of Ta 2 O 5 etching was proven with thermodynamic and QMS studies, and selectivity was demonstrated on a patterned Al 2 O 3 /Ta 2 O 5 double layer.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland
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