Nonlinear adjustment of the photoresponse of ZnO/a-Ga 2 O 3 heterojunction photodetectors by inserting a SiO 2 dielectric layer
Source abstract
Abstract
This work utilizes the insertion of a SiO 2 dielectric layer to alter the barrier height of the ZnO/Ga 2 O 3 heterojunction, achieving nonlinear control over the photodetector responsivity.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
Engineering Research Center of Optoelectronic Functional Materials, Ministry of Education, Changchun 130022, China
Funding
National Natural Science Foundation of China · Jilin Provincial Scientific and Technological Development Program
References (31)
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