An ultrahigh performance InGaN/GaN visible-light phototransducer based on polarization induced heterointerface barrier and minority carrier localization
Source abstract
Abstract
Polarization induced negative charges at pseudo-crystalline InGaN/GaN heterointerfaces were utilized to increase the interface potential and to form a bidirectional potential barrier, leading to an ultrasensitive photoresponse.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong, 510006, China
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510006, China
Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou, Guangdong, 510006, China
Funding
Special Project for Research and Development in Key areas of Guangdong Province
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