Large thermoelectric figure of merit in graphene layered devices at low temperature
Source abstract
Abstract
Abstract Nanostructured materials have emerged as an alternative to enhance the figure of merit ( ZT ) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT ; however, this effect is countered by its impressive thermal conductivity. In this work TE layered devices composed of electrochemically exfoliated graphene (EEG) and a phonon blocking material such as poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline (PANI) and gold nanoparticles (AuNPs) at the interface were prepared. The figure of merit, ZT , of each device was measured in the cross-plane direction using the Transient Harman Method (THM) and complemented with AFM-based measurements. The results show remarkable high ZT values (0.81 < ZT < 2.45) that are directly related with the topography, surface potential, capacitance gradient and resistance of the devices at the nanoscale.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Universidad de los Andes
Universidad Central
Universidad Manuela Beltrán
National Chiao Tung University
SulfurScience Technology Co., Ltd
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Show source-provided references
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