Excited Rydberg states in MoSe2/WSe2 heterostructures
Source abstract
Abstract
Abstract The functional form of Coulomb interactions in the transition metal dichalcogenides (TDMs) and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman experiments on specific Raman peaks only observed at excited states of the excitons. This data is used to validate a model of the Coulomb potential in these structures which predicts the exciton energies to within ∼5 meV. This model is used to determine the effect of heterostructure formation on the single-particle band gaps of the layers and will have a wide applicability in designing the next generation of more complex TDM structures.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
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References (46)
Show source-provided references
1. Dielectric screening in two-dimensional insulators: implications for excitonic and impurity states in graphane10.1103/PhysRevB.84.085406 ↗
2. Coulomb interaction in thin semiconductor and semimetal films
3. Coulomb engineering of the bandgap and excitons in two-dimensional materials10.1038/ncomms15251 ↗
4. Colloquium: excitons in atomically thin transition metal dichalcogenides10.1103/RevModPhys.90.021001 ↗
5. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS210.1103/PhysRevLett.113.076802 ↗
6. Observation of excitonic Rydberg states in monolayer MoS2 and WS2 by photoluminescence excitation spectroscopy10.1021/nl504868p ↗
7. Optical spectroscopy of excited exciton states in MoS2 monolayers in van der Waals heterostructures10.1103/PhysRevMaterials.2.011001 ↗
8. Observation of intravalley phonon scattering of 2s excitons in MoSe2 and WSe2 monolayers10.1088/2053-1583/ab98f0 ↗
9. Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe210.1038/s41467-018-05863-5 ↗
10. Trions, and dark excitons in monolayer WS2 using resonance Raman spectroscopy10.1021/acs.nanolett.7b05184 ↗
11. Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer10.1038/s41467-017-02286-6 ↗
12. Tightly bound trions in monolayer MoS210.1038/nmat3505 ↗
13. Unconventional superconductivity in magic-angle graphene superlattices10.1038/nature26160 ↗
14. Tuning superconductivity in twisted bilayer graphene10.1126/science.aav1910 ↗
15. Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene10.1126/science.aaw3780 ↗
16. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures10.1038/ncomms7242 ↗
17. Exchange-driven intravalley mixing of excitons in monolayer transition metal dichalcogenides10.1038/s41567-018-0362-y ↗
18. Magnetooptics of exciton Rydberg states in a monolayer semiconductor10.1103/PhysRevLett.120.057405 ↗
19. Observation of interlayer excitons in MoSe2 single crystals10.1103/PhysRevB.97.241404 ↗
20. Giant enhancement of the optical second-harmonic emission of WSe2 monolayers by laser excitation at exciton resonances10.1103/PhysRevLett.114.097403 ↗
21. Magnetophotoluminescence of exciton Rydberg states in monolayer WSe210.1103/PhysRevB.99.205420 ↗
22. Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers10.1038/s41586-019-0957-1 ↗
23. Luminescent emission of excited Rydberg excitons from monolayer WSe210.1021/acs.nanolett.9b00029 ↗
24. Exciton states in monolayer MoSe2: impact on interband transitions10.1088/2053-1583/2/4/045005 ↗
25. Superposition of intra- and inter-layer excitons in twistronic MoSe2/WSe2 bilayers probed by resonant Raman scattering10.1088/2053-1583/abe778 ↗
26. Experimental realisation of dual periodicity moiré superlattice in a MoSe2/WSe2 heterobilayer
27. Interference effect on Raman spectrum of graphene on SiO2/Si10.1103/PhysRevB.80.125422 ↗
28. Measurement of the absolute Raman cross section of the optical phonon in silicon10.1016/j.ssc.2011.01.011 ↗
29. Experimental demonstration of the suppression of optical phonon splitting in 2D materials by Raman spectroscopy10.1088/2053-1583/ab81b1 ↗
30. Resonance effects in the Raman scattering of monolayer and few-layer MoSe210.1103/PhysRevB.93.155407 ↗
31. Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy10.1103/PhysRevX.8.031073 ↗
32. Localized interlayer complexes in heterobilayer transition metal dichalcogenides10.1103/PhysRevB.97.195452 ↗
33. Visualizing electrostatic gating effects in two-dimensional heterostructures10.1038/s41586-019-1402-1 ↗
34. Shubnikov-de haas oscillations of high-mobility holes in monolayer and bilayer WSe2: landau level degeneracy, effective mass, and negative compressibility10.1103/PhysRevLett.116.086601 ↗
35. Large effective mass and interaction-enhanced Zeeman splitting of K-valley electrons in MoSe210.1103/PhysRevB.97.201407 ↗
36. Normal modes in hexagonal boron nitride10.1103/PhysRev.146.543 ↗
37. Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk10.1038/s41699-018-0050-x ↗
38. The preparation and properties of transition metal dichalcogenide single crystals10.1016/0022-0248(72)90129-7 ↗
39. Semiconducting behavior of substituted tungsten diselenide and its analogues10.1149/1.2426317 ↗
40. Double indirect interlayer exciton in a MoSe2/WSe2 van der Waals Heterostructure10.1021/acsnano.8b01369 ↗
41. Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 van der Waals Heterostructures10.1021/acsnano.7b00640 ↗
42. kp theory for two-dimensional transition metal dichalcogenide semiconductors10.1088/2053-1583/2/2/022001 ↗
43. Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures10.1038/s41586-019-0986-9 ↗
44. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping10.1088/2053-1583/1/1/011002 ↗
45. Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides10.1088/2053-1583/3/4/045008 ↗
46. Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers10.1039/C8NR00719E ↗