Transport through the network of topological channels in HgTe based quantum well
Source abstract
Abstract
Abstract Topological insulators (TIs) represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two-dimensional (2D) system based on the HgTe quantum well (QW) of critical width random deviations of the well width from its average value result in local crossovers from zero gap 2D Dirac fermion system to either the 2D TI or the ordinary insulator, forming a complicated in-plane network of helical channels along the zero-gap lines. We have studied experimentally the transport properties of the critical width HgTe QWs near the Dirac point, where the conductance is determined by a percolation along the zero-gap lines. The experimental results confirm the presence of percolating conducting channels of a finite width. Our work establishes the critical width HgTe QW as a promising platform for the study of the interplay between topology and localization.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
Show source-provided references
1. Topological order and the quantum spin Hall effect10.1103/PhysRevLett.95.146802 ↗
2. Topological insulator10.1103/RevModPhys.82.3045 ↗
3. Topological insulators and superconductors10.1103/RevModPhys.83.1057 ↗
4. The quantum spin Hall effect and topological insulators10.1063/1.3293411 ↗
5. Topological invariants of time-reversal-invariant band structures10.1103/PhysRevB.75.121306 ↗
6. The birth of topological insulators10.1038/nature08916 ↗
7. Quantum spin Hall insulator state in HgTe quantum10.1126/science.1148047 ↗
8. The quantum spin Hall effect10.1063/1.3577612 ↗
9. Nonlocal transport in the quantum spin Hall state10.1126/science.1174736 ↗
10. Transport in disordered two-dimensional topological insulators10.1103/PhysRevB.84.121302 ↗
11. Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells10.1103/PhysRevLett.114.126802 ↗
12. Scaling of local and nonlocal resistances in a 2D topological insulator based on HgTe quantum well10.1088/2053-1583/2/4/044015 ↗
13. Evidence for helical edge modes in inverted InAs/GaSb quantum wells10.1103/PhysRevLett.107.136603 ↗
14. Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells10.1103/PhysRevLett.112.026602 ↗
15. Robust helical edge transport in gated InAs/GaSb bilayers10.1103/PhysRevLett.114.096802 ↗
16. Insulating state and giant nonlocal response in an InAs/GaSb quantum well in the quantum Hall regime10.1103/PhysRevLett.112.036802 ↗
17. Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure10.1103/PhysRevB.91.245309 ↗
18. Bernevig · 2013
19. Localization in a quantum spin Hall system10.1103/PhysRevLett.98.076802 ↗
20. Two-dimensional spin-filtered chiral network model for the Z2 quantum spin-Hall effect10.1103/PhysRevB.76.075301 ↗
21. Boundary criticality at the Anderson transition between a metal and a quantum spin Hall insulator in two dimensions10.1103/PhysRevB.78.115301 ↗
22. Exact exponents for the spin quantum Hall transition in the presence of multiple edge channels10.1103/PhysRevLett.108.126801 ↗
23. Criticality of the metal-topological insulator transition driven by disorder10.1103/PhysRevB.87.205141 ↗
24. Supersymmetry approach to delocalization transitions in a network model of the weak-field quantum Hall effect and related models10.1103/PhysRevB.89.235305 ↗
25. Percolation, quantum tunnelling and the integer Hall effect10.1088/0022-3719/21/14/008 ↗
26. Topological Anderson insulator10.1103/PhysRevLett.102.136806 ↗
27. Single valley Dirac fermions in zero-gap HgTe quantum wells10.1038/nphys1914 ↗
28. Microwave absorption in 2D topological insulators with a developed edge states network10.1002/pssb.201800652 ↗
29. Conductivity of a two-dimensional HgTe layer near the critical width: the role of developed edge states network and random mixture of p-and n-domains10.1103/PhysRevB.101.125415 ↗
30. Magneto-transport in inverted HgTe quantum wells10.1038/s41535-019-0154-3 ↗
31. Growing HgTe Cd Hg Te 0.735 0.265 quantum wells by molecular beam epitaxy10.3103/S8756699007040127 ↗
32. Weak localization of Dirac fermions in HgTe quantum wells10.1134/S0021364012230099 ↗
33. Quantum Hall effect in a system of gapless Dirac fermions in HgTe quantum wells10.1134/S0021364014230076 ↗
34. Robust helical edge transport at ν = 0 quantum Hall state10.1103/PhysRevB.96.045304 ↗
35. Mobility of Dirac electrons in HgTe quantum wells10.1134/S0021364016180089 ↗
36. Disordered electronic systems10.1103/RevModPhys.57.287 ↗
37. Metallic behavior and related phenomena in two dimensions10.1103/RevModPhys.73.251 ↗
38. Gantmakher · 2005
39. Davies · 1997
40. Electronic transport in two-dimensional graphene10.1103/RevModPhys.83.407 ↗
41. Electron transport in disordered graphene10.1103/PhysRevB.74.235443 ↗
42. Zitterbewegung, chirality and minimal conductivity in graphene10.1140/epjb/e2006-00203-1 ↗
43. Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering10.1103/PhysRevLett.101.146805 ↗
44. Capacitance spectroscopy of a system of gapless Dirac fermions in a HgTe quantum well10.1134/S0021364016240103 ↗