Valley-selective topologically ordered states in irradiated bilayer graphene
Source abstract
Abstract
Abstract Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is, however, topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topologically ordered states, distinguishable by edge transport and circular dichroism. Notably, quantized charge, spin, and valley Hall conductivities coexist in one stabilized state.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Topological Materials and Phenomena · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Texas at Dallas
Author to whom any correspondence should be addressed.
Funding
NSF · UTD Research Enhancement Funds · ARO · AFOSR
References (81)
Show source-provided references
1. The electronic properties of graphene10.1103/RevModPhys.81.109 ↗
2. Electronic structure of multilayer graphene10.1143/PTPS.176.227 ↗
3. Spontaneous quantum Hall states in chirally stacked few-layer graphene systems10.1103/PhysRevLett.106.156801 ↗
4. Topological phases in two-dimensional materials: a review10.1088/0034-4885/79/6/066501 ↗
5. Landau-level degeneracy and quantum Hall effect in a graphite bilayer10.1103/PhysRevLett.96.086805 ↗
6. Controlling the electronic structure of bilayer graphene10.1126/science.1130681 ↗
7. Direct observation of a widely tunable bandgap in bilayer graphene10.1038/nature08105 ↗
8. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy10.1103/PhysRevLett.102.256405 ↗
9. Observation of an electrically tunable band gap in trilayer graphene10.1038/nphys2102 ↗
10. Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric fields10.1021/nl303375a ↗
11. Spontaneous chiral symmetry breaking in bilayer graphene10.1016/j.synthmet.2015.07.028 ↗
12. Pseudospin magnetism in graphene10.1103/PhysRevB.77.041407 ↗
13. Topological insulators and nematic phases from spontaneous symmetry breaking in 2D Fermi systems with a quadratic band crossing10.1103/PhysRevLett.103.046811 ↗
14. Spontaneous inversion symmetry breaking in graphene bilayers10.1103/PhysRevB.81.041402 ↗
15. Dynamical screening and exotic instability in bilayer graphene10.1103/PhysRevLett.104.156803 ↗
16. Many-body instability of Coulomb interacting bilayer graphene: renormalization group approach10.1103/PhysRevB.81.041401 ↗
17. Spontaneous symmetry breaking and Lifshitz transition in bilayer graphene10.1103/PhysRevB.82.201408 ↗
18. Quantum anomalous Hall state in bilayer graphene10.1103/PhysRevB.82.115124 ↗
19. Lattice theory of pseudospin ferromagnetism in bilayer graphene: competing interaction-induced quantum Hall states10.1103/PhysRevB.83.115408 ↗
20. Distinguishing spontaneous quantum Hall states in bilayer graphene10.1103/PhysRevLett.108.186804 ↗
21. Polarization-sensitive absorption of THz radiation by interacting electrons in chirally stacked multilayer graphene10.1088/1367-2630/14/9/095005 ↗
22. Antiferromagnetism in the Hubbard model on the Bernal-stacked honeycomb bilayer10.1103/PhysRevLett.109.126402 ↗
23. Instabilities of interacting electrons on the honeycomb bilayer10.1103/PhysRevB.85.235408 ↗
24. Competing nematic, antiferromagnetic, and spin-flux orders in the ground state of bilayer graphene10.1103/PhysRevB.85.245451 ↗
25. Electronic multicriticality in bilayer graphene10.1103/PhysRevB.86.075467 ↗
26. Absence of gapped broken inversion symmetry phase of electrons in bilayer graphene under the renormalized ring-diagram approximation10.1103/PhysRevB.86.125438 ↗
27. Possible broken inversion and time-reversal symmetry state of electrons in bilayer graphene10.1103/PhysRevB.86.235126 ↗
28. Ordered-current state of electrons in bilayer graphene10.1103/PhysRevB.88.045410 ↗
29. Coexistence and competition of nematic and gapped states in bilayer graphene10.1103/PhysRevB.86.125439 ↗
30. Competing ordered states in bilayer graphene10.1103/PhysRevB.86.155128 ↗
31. Antiferromagnetic state in bilayer graphene10.1103/PhysRevB.86.195435 ↗
32. Ordered loop current states in bilayer graphene10.1103/PhysRevB.87.035427 ↗
33. Spontaneous layer-pseudospin domain walls in bilayer graphene10.1103/PhysRevLett.113.116803 ↗
34. Disorder-tuned selection of order in bilayer graphene10.1103/PhysRevB.91.205425 ↗
35. Local compressibility measurements of correlated states in suspended bilayer graphene10.1103/PhysRevLett.105.256806 ↗
36. Broken-symmetry states in doubly gated suspended bilayer graphene10.1126/science.1194988 ↗
37. Interaction-driven spectrum reconstruction in bilayer graphene10.1126/science.1208683 ↗
38. Stacking-dependent band gap and quantum transport in trilayer graphene10.1038/nphys2103 ↗
39. Spontaneously gapped ground state in suspended bilayer graphene10.1103/PhysRevLett.108.076602 ↗
40. Transport spectroscopy of symmetry-broken insulating states in bilayer graphene10.1038/nnano.2011.251 ↗
41. Evidence for a spontaneous gapped state in ultraclean bilayer graphene10.1073/pnas.1205978109 ↗
42. Transport gap in suspended bilayer graphene at zero magnetic field10.1103/PhysRevB.85.155412 ↗
43. Spin symmetry of the bilayer graphene ground state10.1103/PhysRevB.87.161402 ↗
44. Competing ordered states with filling factor two in bilayer graphene10.1038/ncomms5550 ↗
45. Competition between spontaneous symmetry breaking and single-particle gaps in trilayer graphene10.1038/ncomms6656 ↗
46. Insulating state in tetralayers reveals an even–odd interaction effect in multilayer graphene10.1038/ncomms7419 ↗
47. Model for a quantum Hall effect without Landau levels: condensed-matter realization of the ‘parity anomaly’10.1103/PhysRevLett.61.2015 ↗
48. Quantum spin Hall effect in graphene10.1103/PhysRevLett.95.226801 ↗
49. Observation of Floquet–Bloch states on the surface of a topological insulator10.1126/science.1239834 ↗
50. Driven electronic states at the surface of a topological insulator10.1103/PhysRevB.88.155129 ↗
51. Periodically driven quantum systems: effective Hamiltonians and engineered gauge fields10.1103/PhysRevX.4.031027 ↗
52. Universal high-frequency behavior of periodically driven systems: from dynamical stabilization to Floquet engineering10.1080/00018732.2015.1055918 ↗
53. Band structure of ABC-stacked graphene trilayers10.1103/PhysRevB.82.035409 ↗
54. Photovoltaic Hall effect in graphene10.1103/PhysRevB.79.081406 ↗
55. Topological characterization of periodically driven quantum systems10.1103/PhysRevB.82.235114 ↗
56. Radiation effects on the electronic properties of bilayer graphene10.1103/PhysRevB.86.125449 ↗
57. Floquet chiral edge states in graphene10.1103/PhysRevB.89.121401 ↗
58. Topological confinement in bilayer graphene10.1103/PhysRevLett.100.036804 ↗
59. Topological origin of subgap conductance in insulating bilayer graphene10.1038/nphys1822 ↗
60. Electronic highways in bilayer graphene10.1021/nl201941f ↗
61. Chiral states in bilayer graphene: magnetic field dependence and gap opening10.1103/PhysRevB.84.125451 ↗
62. Valley Chern numbers and boundary modes in gapped bilayer graphene10.1073/pnas.1308853110 ↗
63. Topological edge states at a tilt boundary in gated multilayer graphene10.1103/PhysRevX.3.021018 ↗
64. Topological valley transport at bilayer graphene domain walls10.1038/nature14364 ↗
65. Gate-controlled topological conducting channels in bilayer graphene10.1038/nnano.2016.158 ↗
66. Direct imaging of topological edge states at a bilayer graphene domain wall10.1038/ncomms11760 ↗
67. Soliton-dependent plasmon reflection at bilayer graphene domain walls10.1038/nmat4653 ↗
68. Fine structure constant defines visual transparency of graphene10.1126/science.1156965 ↗
69. Mak · Phys. Rev. Lett. · 2008 · 10110.1103/PhysRevLett.101.196405 ↗
70. Spin and pseudospins in layered transition metal dichalcogenides10.1038/nphys2942 ↗
71. Valley-dependent optoelectronics from inversion symmetry breaking10.1103/PhysRevB.77.235406 ↗
72. Pseudospin in optical and transport properties of graphene10.1103/PhysRevLett.107.156801 ↗
73. Perfect valley filter in a topological domain wall10.1103/PhysRevB.92.041404 ↗
74. Dynamical preparation of Floquet Chern insulators10.1038/ncomms9336 ↗
75. Controlled population of Floquet-Bloch state via coupling to Bose and Fermi baths10.1103/PhysRevX.5.041050 ↗
76. Floquet topological insulator in semiconductor quantum wells10.1038/nphys1926 ↗
77. Photoinduced topological phase transition and a single Dirac-cone state in silicene10.1103/PhysRevLett.110.026603 ↗
78. When chiral photons meet chiral fermions: photoinduced anomalous Hall effects in Weyl semimetals10.1103/PhysRevLett.116.026805 ↗
79. Tunable Weyl semimetals in periodically driven nodal line semimetals10.1103/PhysRevLett.117.087402 ↗
80. Photonic Floquet topological insulators10.1038/nature12066 ↗
81. Experimental realization of the topological Haldane model with ultracold fermions10.1038/nature13915 ↗