Molecular beam epitaxial step-edge growth of integrated hetero-structures: Bi2Te3/multi-stepped Sb2Te3 nanoplate
Source abstract
Abstract
Abstract We report the synthesis of multiple Bi2Te3 shells on multi-stepped Sb2Te3 nanoplates using molecular beam epitaxial (MBE) step-edge growth. For the growth of Bi2Te3/Sb2Te3 hetero-structures, multi-stepped Sb2Te3 nanoplates with stair-like morphology following layer-by-layer growth mode were obtained by optimizing the growth temperature, and the growth of Bi2Te3 on the step-edges of the Sb2Te3 nanoplates was followed. Width of Bi2Te3 on the Sb2Te3 nanoplates was controlled by changing the growth time. Structural properties of the hetero-structures were investigated using aberration-corrected (Cs-corrected) high-angle annular dark-field scanning transmission electron microscopy, revealing the interface between Sb2Te3 and Bi2Te3. In-plane epitaxial relation at the interface was confirmed using fast Fourier transforms. Compositional analysis of Bi2Te3 and Sb2Te3 was verified through energy-dispersive x-ray spectroscopy. Furthermore, we performed density functional theory calculations to confirm the preferential growth of Bi2Te3 on the step-edges of Sb2Te3. By forming multi-stepped core structure, it would be feasible to create various integrated hetero-structures.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · nanoparticles nucleation surface interactions · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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