Highly efficient lateral spin valve device based on graphene/hBN/Fe3GeTe2
Source abstract
Abstract
Abstract In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe3GeTe2 (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inject and detect spins in the graphene channel. The hBN tunnel barrier provides a high-quality interface between the ferromagnetic electrodes and graphene, eliminating the conductivity mismatch problem, thus ensuring efficient spin injection and detection with spin injection efficiencies of up to P = 40%. Our results demonstrate that FGT/hBN/graphene heterostructures form a promising platform for realizing 2D van der Waals spintronic devices.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Graphene research and applications · 2D Materials and Applications
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References (55)
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