Strain activation of localized states in WSe2
Source abstract
Abstract
Abstract Single-photon emission centers generated by controlled atomic force microscope (AFM) indentation in monolayer WSe2 on a flexible polymer substrate are explored for applications in quantum technologies. Here, we study the response of these emitters to the polymer substrate’s strain state, which is controlled by selecting the indentation force and by gradually thermally annealing the samples. In the indented areas, we observe sharp new photoluminescence peaks in the regions 1.62–1.68 eV and 1.70–1.73 eV characterized by sublinear power dependence and spectral wandering. We find that these peaks arise only when the indentation force exceeds a few µN and generally red-shift as the applied force increases. Conversely, after thermal annealing (T <60{}∘C), WSe2 experiences strain relaxation, leading to a blue shift of the peaks’ spectral position and their ultimate disappearance. Our analysis of the peaks’ positions vs strain allows us to draw several conclusions about the nature of these emission. Specifically, we elucidate the roles of excitonic confinement and hybridization between free excitons and defect-related states, a process activated by the strain level. Overall, our approach suggests that the energy of localized emitters may be controlled via strain engineering.
Source: crossref · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Inorganic Chemistry and Materials · 2D Materials and Applications · Organic and Molecular Conductors Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
Show source-provided references
1. Colloquium: excitons in atomically thin transition metal dichalcogenides10.1103/RevModPhys.90.021001 ↗
2. Emerging exciton physics in transition metal dichalcogenide heterobilayers10.1038/s41578-022-00440-1 ↗
3. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors10.1038/s41699-018-0074-2 ↗
4. Theory of neutral and charged excitons in monolayer transition metal dichalcogenides10.1103/PhysRevB.88.045318 ↗
5. Picosecond stimulated photon echo due to intrinsic excitations in semiconductor mixed crystals10.1103/PhysRevLett.64.792 ↗
6. Observation of time-resolved picosecond stimulated photon echoes and free polarization decay in GaAs/AlGaAs multiple quantum wells10.1103/PhysRevLett.66.934 ↗
7. Localized exciton states in silver halides10.1016/0022-3697(90)90148-9 ↗
8. Localized intervalley defect excitons as single-photon emitters in WSe210.1103/PhysRevLett.123.146401 ↗
9. Spin-valley locking effect in defect states of monolayer MoS210.1021/acs.nanolett.0c00138 ↗
10. Atomically-thin quantum light emitting diodes10.1007/978-3-030-01482-7_4 ↗
11. Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe210.1038/s41467-023-41292-9 ↗
12. Spectroscopy of single N-V centers in diamond10.1002/1438-5171(200112)2:43.0.CO;2-D ↗
13. Electrical control of charged carriers and excitons in atomically thin materials10.1038/s41565-017-0030-x ↗
14. Light emission properties of 2D transition metal dichalcogenides: fundamentals and applications10.1002/adom.201800420 ↗
15. Large-scale quantum-emitter arrays in atomically thin semiconductors10.1038/ncomms15093 ↗
16. Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor10.1038/ncomms15053 ↗
17. Quantum calligraphy: writing single-photon emitters in a two-dimensional materials platform10.1021/acsnano.8b08730 ↗
18. Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure10.1126/sciadv.abj3176 ↗
19. Purcell enhancement and polarization control of single-photon emitters in monolayer WSe2 using dielectric nanoantennas10.1515/nanoph-2022-0628 ↗
20. Cavity optomechanics with WSe2 single photon emitters
21. Solid-state single-photon emitters10.1038/nphoton.2016.186 ↗
22. Single defect light-emitting diode in a van der Waals heterostructure10.1021/acs.nanolett.6b01580 ↗
23. Creation of single-photon emitters in WSe2 monolayers using nanometer-sized gold tips10.1021/acs.nanolett.0c01789 ↗
24. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons10.1038/srep02657 ↗
25. Optically active quantum dots in monolayer WSe210.1038/nnano.2015.60 ↗
26. Activated single photon emitters and enhanced deep-level emissions in hexagonal boron nitride strain crystal10.1002/adfm.202306128 ↗
27. Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K10.1038/s41467-021-23709-5 ↗
28. Strain control of hybridization between dark and localized excitons in a 2D semiconductor10.1038/s41467-022-35352-9 ↗
29. Enhanced dielectric screening and photoluminescence from nanopillar-strained MoS2 nanosheets: implications for strain funneling in optoelectronic applications10.1021/acsanm.1c01368 ↗
30. Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS210.1038/s41566-019-0581-5 ↗
31. Strain-tunable single photon sources in WSe2 monolayers10.1021/acs.nanolett.9b02221 ↗
32. Nanomechanical spectroscopy of 2D materials10.1021/acs.nanolett.2c01289 ↗
33. Optical emission from a charge-tunable quantum ring10.1038/35016030 ↗
34. Quantum emission from hexagonal boron nitride monolayers10.1038/nnano.2015.242 ↗
35. Cascaded emission of single photons from the biexciton in monolayered WSe210.1038/ncomms13409 ↗
36. Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2 at room temperature10.1038/s41565-020-0730-5 ↗
37. Position and frequency control of strain-induced quantum emitters in WSe2 monolayers10.1021/acs.nanolett.9b03421 ↗
38. Strain tuning of excitons in monolayer WSe210.1103/PhysRevB.98.115308 ↗
39. Strain-correlated localized exciton energy in atomically thin semiconductors10.1021/acsphotonics.0c00626 ↗
40. Strain effects on the electronic properties of monolayer transition metal dichalcogenides
41. Direct-to-indirect bandgap transition in monolayer transition metal dichalcogenides
42. Strain engineering in two-dimensional semiconductors
43. Bandgap modulation in transition metal dichalcogenides under tensile strain
44. Electronic and optical properties of transition metal dichalcogenides under strain