Controlling transition metal atomic ordering in two-dimensional Mo1−x W x S2 alloys
Source abstract
Abstract
Abstract The unique optical and electronic properties of two-dimensional transition metal dichalcogenides (2D TMDs) make them promising materials for applications in (opto-)electronics, catalysis and more. Specifically, alloys of 2D TMDs have broad potential applications owing to their composition-controlled properties. Several important challenges remain regarding controllable and scalable fabrication of these alloys, such as achieving control over their atomic ordering (i.e. clustering or random mixing of the transition metal atoms within the 2D layers). In this work, atomic layer deposition is used to synthesize the TMD alloy Mo1−x W x S2 with excellent composition control along the complete composition range 0 ⩽ x ⩽ 1. Importantly, this composition control allows us to control the atomic ordering of the alloy from well-mixed to clustered while keeping the alloy composition fixed, as is confirmed directly through atomic-resolution high-angle annular dark-field scanning transmission electron micrography imaging. The control over atomic ordering leads to tuning of the bandgap, as is demonstrated using optical transmission spectroscopy. The relation between this tuning of the electronic structure and the atomic ordering of the alloy was further confirmed through ab-initio calculations. Furthermore, as the atomic ordering modulates from clustered to well-mixed, the typical MoS2 and WS2 A1g vibrational modes converge. Our results demonstrate that atomic ordering is an important parameter that can be tuned experimentally to finely tune the fundamental properties of 2D TMD alloys for specific applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (59)
Show source-provided references
1. The crystal structure of molybdenite10.1021/ja01659a020 ↗
2. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
3. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
4. Atomically thin MoS : a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
6. Two-dimensional material nanophotonics10.1038/nphoton.2014.271 ↗
7. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials10.1021/nl401544y ↗
8. Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications10.1039/C5NR05712D ↗
9. Indirect to direct band gap crossover in two-dimensional WS2(1−x Se2x alloys10.1038/s41699-020-00187-9 ↗
10. Crystal data for mixed-anion molybdenum dichalcogenides10.1021/ic50205a047 ↗
11. Two-dimensional transition metal dichalcogenide alloys: stability and electronic properties10.1021/jz301673x ↗
12. 2-dimensional transition metal dichalcogenides with tunable direct band gaps: MoS2(1−x Se2x monolayers10.1002/adma.201304389 ↗
13. Synthesis and enhanced electrochemical catalytic performance of monolayer WS2(1−x Se2x with a tunable band gap10.1002/adma.201500368 ↗
14. Band-gap engineering with HfS x Se2−x10.1103/PhysRevB.69.075205 ↗
15. Growth and band gap determination of the ZrS x Se2−x single crystal series10.1103/PhysRevB.80.035206 ↗
16. Large-area synthesis of monolayer MoTe x Se2−x alloys by chemical vapor deposition10.1063/1.5102085 ↗
17. Monolayer semiconducting transition metal dichalcogenide alloys: stability and band bowing10.1063/1.4799126 ↗
18. Electrical properties of the MoTe2−WTe2 and MoSe2−WSe2 systems10.1063/1.1702795 ↗
19. Facile synthesis of MoS2 and Mo x W1-x S2 triangular monolayers10.1063/1.4895469 ↗
20. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys10.1021/nn401420h ↗
21. Suppression of defects and deep levels using isoelectronic tungsten substitution in monolayer MoSe210.1002/adfm.201603850 ↗
22. Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate10.1002/smll.201102654 ↗
23. High luminescence efficiency in MoS2 grown by chemical vapor deposition10.1021/acsnano.6b03443 ↗
24. Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition10.1002/adom.201300428 ↗
25. Growth of alloy MoS2x Se2(1–x nanosheets with fully tunable chemical compositions and optical properties10.1021/ja500069b ↗
26. CVD synthesis of Mo((1-x)W x S2 and MoS(2(1-x)Se(2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide10.1039/C5NR02515J ↗
27. Raman study of 2H-Mo1- x W x S2 layered mixed crystals10.1016/j.jallcom.2010.07.120 ↗
28. Studies on layer disorder, microstructural parameters and other properties of tungsten-substitued molybdenum disulfide, Mo1−x W x S2 (0⩽x⩽1)10.1016/S0379-6779(97)81262-3 ↗
29. Visualization and quantification of transition metal atomic mixing in Mo1-x W x S2 single layers10.1038/ncomms2351 ↗
30. Discrimination of atoms on the surface of a two-dimensional solid solution with scanning tunneling microscopy10.1021/ja00159a021 ↗
31. Low-temperature plasma-enhanced atomic layer deposition of 2D MoS2: large area, thickness control and tuneable morphology10.1039/C8NR02339E ↗
32. Plasma-enhanced atomic layer deposition of two-dimensional WS2 from WF6, H2 plasma, and H2S10.1021/acs.chemmater.6b05214 ↗
33. Edge-site nano-engineering of WS2 by low temperature plasma-enhanced atomic layer deposition for electrocatalytic hydrogen evolution10.1021/acs.chemmater.9b01008 ↗
34. Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer10.1038/ncomms8817 ↗
35. Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review10.1021/acs.chemmater.8b02878 ↗
36. Infrared and Raman studies of long-wavelength optical phonons in hexagonal MoS210.1103/PhysRevB.3.4286 ↗
37. Raman scattering in layered compound 2H-WS210.1016/0038-1098(80)90518-9 ↗
38. Second-order Raman effects, inelastic neutron scattering and lattice dynamics in 2H-WS210.1016/0301-0104(91)80136-6 ↗
39. Raman and photoluminescence spectra of two-dimensional nanocrystallites of monolayer WS2 and WSe210.1088/2053-1583/3/2/025016 ↗
40. Application of a modified random-element-isodisplacement model to long-wavelength optic phonons of mixed crystals10.1103/PhysRev.172.924 ↗
41. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties10.1080/00018736900101307 ↗
42. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides10.1021/j100393a010 ↗
43. Electronic band gaps and exciton binding energies inmonolayer Mo x W1-x S2 transition metal dichalcogenide alloys probed by scanning tunneling and optical spectroscopy10.1103/PhysRevB.94.075440 ↗
44. Probing the origin and suppression of vertically oriented nanostructures of 2D WS2 layers10.1021/acsami.9b19716 ↗
45. Lattice mode degeneracy in MoS2 and Other layer compounds10.1103/PhysRevLett.25.362 ↗
46. First-principles Raman spectra of MoS2, WS2 and their heterostructures10.1039/c3nr06906k ↗
47. The Raman effect in crystals10.1080/00018736400101051 ↗
48. Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS210.1103/PhysRevB.87.081307 ↗
49. Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS210.1007/s12274-015-0762-6 ↗
50. Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain10.1002/smll.201202876 ↗
51. Preparation and crystallinity of molybdenum and tungsten sulfides10.1002/zaac.19643280514 ↗
52. Raman shifts in electron-irradiated monolayer MoS210.1021/acsnano.5b07388 ↗
53. B-spline parametrization of the dielectric function applied to spectroscopic ellipsometry on amorphous carbon10.1063/1.3257237 ↗
54. Optical properties of large-area ultrathin MoS2 films: evolution from a single layer to multilayers10.1063/1.4901464 ↗
55. Projector augmented-wave method10.1103/PhysRevB.50.17953 ↗
56. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
57. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
58. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu10.1063/1.3382344 ↗
59. Effective band structure of random alloys10.1103/PhysRevLett.104.236403 ↗