Spin-polarized valley Hall effect in ultrathin silicon nanomembrane via interlayer antiferromagnetic coupling

Fundamental understanding of two-dimensional materials has spurred a surge in the search for topological quantum phase associated with the valley degree of freedom (VDOF). We discuss a spin-polarized version to the VDOF in which spin degeneracy is broken by the antiferromagnetic exchange coupling (LAFM) between opposite layers of the quasi-two-dimensional silicon nanomembrane (SiNM). Based on first principles calculations, we found that the LAFM state in SiNM can lead to metal–insulator transition (MIT). The broken degeneracy of spin degree of freedom in this insulating state of ultrathin SiNM may differ for different valleys, so that the SiNM can be exploited to produce the spatially separated spin and valley currents. We propose that the tunable spin-polarized valley photocurrents can be generated in an experimentally feasible ellipsometry setup. Our work shows promise for the development of spintronic and valleytronic devices compatible with current silicon industry.