Location-specific growth and transfer of arrayed MoS 2 monolayers with controllable size
Source abstract
Abstract
Abstract We present a controlled chemical vapor deposition (CVD) growth and transfer of arrayed MoS 2 monolayers on predetermined locations. The patterned transition metal oxide (e.g. MoO 3 ) source substrate was contacted face-to-face with an SiO 2 growth substrate, where localized MoS 2 flakes were synthesized on both source and growth substrates, following a CVD procedure. This growth technique enabled the growth of both single crystalline and polycrystalline MoS 2 monolayer arrays with controlled size and location, exclusively on predetermined locations on the growth substrates. As-grown MoS 2 arrays were transferred using a unique process that combines the wet and stamping transfer processes and dramatically enhanced the integrity of transferred MoS 2 on microstructures, while protecting the microstructures during the transfer process. This fabrication technique can be applied to different transition metal dichalcogenides (TMDs) and allows the formation of TMDs on select locations, potentially eliminating a post-lithography step for device fabrication.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Stevens Institute of Technology
References (33)
Show source-provided references
1. Graphene-like two-dimensional materials10.1021/cr300263a ↗
2. Opportunities in two-dimensional materials beyond graphene10.1021/nn400280c ↗
3. The rise of graphene10.1038/nmat1849 ↗
4. Graphene transistors: status, prospects, and problems10.1109/JPROC.2013.2257633 ↗
5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets10.1038/nchem.1589 ↗
6. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
7. Anomalous lattice vibrations of single- and few-layer MoS210.1021/nn1003937 ↗
8. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides10.1021/nn500064s ↗
9. Extraordinary second harmonic generation in tungsten disulfide monolayers10.1038/srep05530 ↗
10. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
11. Atomically thin MoS2: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
12. Hysteresis in single-layer MoS2 field effect transistors10.1021/nn301572c ↗
13. High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems10.1021/nn401429w ↗
14. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 nanosheets10.1021/ar4002312 ↗
15. Photoluminescence from chemically exfoliated MoS210.1021/nl201874w ↗
16. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate10.1002/smll.201102654 ↗
17. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition10.1002/adma.201104798 ↗
18. Increased monolayer domain size and patterned growth of tungsten disulfide through controlling surface energy of substrates10.1088/0022-3727/49/32/325304 ↗
19. The growth scale and kinetics of WS2 monolayers under varying H2 concentration10.1038/srep13205 ↗
20. Principles of crystal nucleation and growth10.2113/0540057 ↗
21. The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of graphene10.1016/j.carbon.2013.07.088 ↗
22. Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations10.1038/ncomms7128 ↗
23. Chemical vapor deposition growth of a periodic array of single-layer MoS2 islands via lithographic patterning of an SiO2/Si substrate10.1088/2053-1583/2/4/045014 ↗
24. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping10.1088/2053-1583/1/1/011002 ↗
25. A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor10.1063/1.4803032 ↗
26. Bandgap engineering of strained monolayer and bilayer MoS210.1021/nl4014748 ↗
27. Growth mechanism of transition metal dichalcogenide monolayers: the role of self-seeding fullerene nuclei10.1021/acsnano.6b01705 ↗
28. The role of surface oxygen in the growth of large single-crystal graphene on copper10.1126/science.1243879 ↗
29. Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene10.1038/nnano.2015.322 ↗
30. Radio frequency transistors and circuits based on CVD MoS210.1021/acs.nanolett.5b01080 ↗
31. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures10.1021/nl501793a ↗
32. Understanding solvent effects on the properties of two-dimensional transition metal dichalcogenides10.1021/acsami.6b01491 ↗
33. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating10.1021/nl4011172 ↗