journal article·2019-04-01Open access

Stacking-dependent interlayer phonons in 3R and 2H MoS 2

Jeremiah van Baren, Gaihua Ye, Jia-An Yan, Zhipeng Ye, Pouyan Rezaie, Peng Yu, Zheng Liu, Rui He, Chun Hung Lui

2D Materials· Volume 6· Issue 2

Abstract

Abstract We have investigated the interlayer shear and breathing phonon modes in MoS 2 with pure 3R and 2H stacking order by using polarization-dependent ultralow-frequency Raman spectroscopy. We observe up to three shear branches and four breathing branches in MoS 2 with thickness from 2 to 13 layers. The breathing modes show the same Raman activity behavior for both polytypes, but the 2H breathing frequencies are consistently several wavenumbers higher than the 3R breathing frequencies, signifying that 2H MoS 2 has slightly stronger interlayer lattice coupling than 3R MoS 2 . In contrast, the shear-mode Raman spectra are strikingly different for 2H and 3R MoS 2 . While the strongest shear mode corresponds to the highest-frequency branch in the 2H structure, it corresponds to the lowest-frequency branch in the 3R structure. Such distinct and complementary Raman spectra of the 3R and 2H polytypes allow us to survey a broad range of shear modes in MoS 2 , from the highest to lowest branch. By combining the linear chain model, group theory, effective bond polarizability model and first-principles calculations, we can account for all the major observations in our experiment.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Organic and Molecular Conductors Research · Chemical and Physical Properties of Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (74)

Show source-provided references
1. Atomically thin MoS2: a new direct-gap semiconductor10.1103/PhysRevLett.105.136805 ↗
2. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
3. Spin and pseudospins in layered transition metal dichalcogenides10.1038/nphys2942 ↗
4. Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation10.1021/nl401561r ↗
5. Observation of intense second harmonic generation from MoS2 atomic crystals10.1103/PhysRevB.87.201401 ↗
6. Valley magnetoelectricity in single-layer MoS210.1038/nmat4931 ↗
7. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics10.1038/nature13792 ↗
8. Electrical control of the valley Hall effect in bilayer MoS2 transistors10.1038/nnano.2015.337 ↗
9. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS210.1038/nphys2524 ↗
10. Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry10.1038/nnano.2014.148 ↗
11. 3R MoS2 with broken inversion symmetry: a promising ultrathin nonlinear optical device10.1002/adma.201701486 ↗
12. Two-dimensional valley electrons and excitons in noncentrosymmetric 3R-MoS210.1103/PhysRevApplied.4.014002 ↗
13. Observation of two polytypes of MoS2 ultrathin layers studied by second harmonic generation microscopy and photoluminescence10.1063/1.4907972 ↗
14. Atomically phase-matched second-harmonic generation in a 2D crystal10.1038/lsa.2016.131 ↗
15. 3R phase of MoS2 and WS2 outperforms the corresponding 2H phase for hydrogen evolution10.1039/C6CC09952A ↗
16. Optical selection rule of excitons in gapped chiral fermion systems10.1103/PhysRevLett.120.077401 ↗
17. The shear mode of multilayer graphene10.1038/nmat3245 ↗
18. Stacking-dependent shear modes in trilayer graphene10.1063/1.4906579 ↗
19. Temperature-activated layer-breathing vibrations in few-layer graphene10.1021/nl501678j ↗
20. Raman spectroscopy as a versatile tool for studying the properties of graphene10.1038/nnano.2013.46 ↗
21. Observation of low energy raman modes in twisted bilayer graphene10.1021/nl4013387 ↗
22. Measurement of layer breathing mode vibrations in few-layer graphene10.1103/PhysRevB.87.121404 ↗
23. Resonant Raman spectroscopy of twisted multilayer graphene10.1038/ncomms6309 ↗
24. Interface coupling in twisted multilayer graphene by resonant Raman spectroscopy of layer breathing modes10.1021/acsnano.5b02502 ↗
25. Raman spectroscopic characterization of stacking configuration and interlayer coupling of twisted multilayer graphene grown by chemical vapor deposition10.1016/j.carbon.2016.09.006 ↗
26. Raman characterization of AB- and ABC-stacked few-layer graphene by interlayer shear modes10.1016/j.carbon.2015.11.062 ↗
27. Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes10.1063/1.4751266 ↗
28. Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films10.1103/PhysRevB.86.241301 ↗
29. Anharmonic phonons in few-layer MoS2: Raman spectroscopy of ultralow energy compression and shear modes10.1103/PhysRevB.87.195316 ↗
30. Raman spectroscopy of shear and layer breathing modes in multilayer MoS210.1103/PhysRevB.87.115413 ↗
31. Interlayer breathing and shear modes in few-trilayer MoS2 and WSe210.1021/nl304169w ↗
32. Helicity-resolved Raman scattering of MoS2, MoSe2, WS2, and WSe2 atomic layers10.1021/acs.nanolett.5b00092 ↗
33. Unified description of the optical phonon modes in N-layer MoTe210.1021/acs.nanolett.5b02683 ↗
34. Resonant Raman and photoluminescence spectra of suspended molybdenum disulfide10.1088/2053-1583/2/4/044003 ↗
35. Observation of interlayer phonon modes in van der Waals heterostructures10.1103/PhysRevB.91.165403 ↗
36. Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers10.1088/2053-1583/2/3/034016 ↗
37. Substrate-free layer-number identification of two-dimensional materials: a case of Mo0.5W0.5S2 alloy10.1063/1.4921911 ↗
38. Interlayer interactions in anisotropic atomically thin rhenium diselenide10.1007/s12274-015-0865-0 ↗
39. Raman scattering of few-layers MoTe210.1088/2053-1583/3/2/025010 ↗
40. Interlayer breathing and shear modes in NbSe2 atomic layers10.1088/2053-1583/3/3/031008 ↗
41. Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy10.1021/acs.nanolett.5b04925 ↗
42. Davydov splitting and excitonic resonance effects in Raman spectra of few-layer MoSe210.1021/acsnano.6b04471 ↗
43. Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in N-layer ReSe2 and ReS210.1021/acsnano.5b07844 ↗
44. Observation of anisotropic interlayer Raman modes in few-layer ReS210.1002/pssr.201510412 ↗
45. Twisted MoSe2 bilayers with variable local stacking and interlayer coupling revealed by low-frequency Raman spectroscopy10.1021/acsnano.5b07807 ↗
46. Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS210.1039/C6NR01569G ↗
47. Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe210.1103/PhysRevB.93.115409 ↗
48. Resonance effects in the Raman scattering of monolayer and few-layer MoSe210.1103/PhysRevB.93.155407 ↗
49. Observation of strong interlayer coupling in MoS2/WS2 heterostructures10.1002/adma.201504631 ↗
50. Raman signatures of inversion symmetry breaking and structural phase transition in type-II Weyl semimetal MoTe210.1038/ncomms13552 ↗
51. Raman characterization of the charge density wave phase of 1T–TiSe2: from bulk to atomically thin layers10.1021/acsnano.6b07737 ↗
52. Excitonic resonance effects and Davydov splitting in circularly polarized Raman spectra of few-layer WSe210.1088/2053-1583/aa8312 ↗
53. Interfacial interactions in van der Waals heterostructures of MoS2 and graphene10.1021/acsnano.7b07015 ↗
54. Observation of forbidden phonons, fano resonance and dark excitons by resonance Raman scattering in few-layer WS210.1088/2053-1583/aa79bb ↗
55. Rigid-layer Raman-active modes in N-layer transition metal dichalcogenides: interlayer force constants and hyperspectral Raman imaging10.1002/jrs.5236 ↗
56. Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by raman spectroscopy10.1002/adma.201501086 ↗
57. Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations10.1021/acsnano.5b01884 ↗
58. Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry10.1021/acs.nanolett.5b03597 ↗
59. Raman signatures of polytypism in molybdenum disulfide10.1021/acsnano.5b05831 ↗
60. Davydov splitting and polytypism in few-layer MoS210.1088/2053-1583/aae61c ↗
61. Mapping of low-frequency Raman modes in CVD-grown transition metal dichalcogenides: layer number, stacking orientation and resonant effects10.1038/srep19476 ↗
62. Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals10.1088/2053-1583/aa77d4 ↗
63. Isotope engineering of van der Waals interactions in hexagonal boron nitride10.1038/nmat5048 ↗
64. Low-frequency interlayer breathing modes in few-layer black phosphorus10.1021/acs.nanolett.5b01117 ↗
65. Large frequency change with thickness in interlayer breathing mode-significant interlayer interactions in few layer black phosphorus10.1021/acs.nanolett.5b00775 ↗
66. Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus10.1103/PhysRevLett.116.087401 ↗
67. Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus10.1039/C5NR06293D ↗
68. Interlayer breathing and shear modes in few-layer black phosphorus10.1088/0953-8984/28/16/165401 ↗
69. Van der Waals interactions and the properties of graphite and 2H-, 3R-and 1T-MoS2: a comparative study10.1016/j.commatsci.2018.05.045 ↗
70. Phonons in single-layer and few-layer MoS2 and WS210.1103/PhysRevB.84.155413 ↗
71. Low-frequency interlayer raman modes to probe interface of twisted bilayer MoS210.1021/acs.nanolett.5b05015 ↗
72. Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials10.1039/C7NR05839J ↗
73. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials—a general bond polarizability model10.1038/srep14565 ↗
74. Observation of layer-breathing mode vibrations in few-layer graphene through combination Raman scattering10.1021/nl302450s ↗