DataVXJournal of Materials Chemistry APaper
journal article·2024Open access

Correction: Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Wensong Ge, Rui Wang, Xiaoyang Zhu, Houchao Zhang, Luanfa Sun, Fei Wang, Hongke Li, Zhenghao Li, Xinyi Du, Huangyu Chen, Fan Zhang, Huifa Shi, Huiqiang Hu, Yongming Xi, Jiankang He, Liang Hu, Hongbo Lan

Journal of Materials Chemistry A· Volume 12· Issue 5
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Source abstract

Abstract

Correction for ‘Recent progress in eutectic gallium indium (EGaIn): surface modification and applications’ by Wensong Ge et al. , J. Mater. Chem. A , 2024, 12 , 657–689, https://doi.org/10.1039/D3TA04798A.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · Advanced Semiconductor Detectors and Materials

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Affiliations

Key Laboratory of Additive Manufacturing and Applications in Universities of Shandong, Shandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, China

Department of Spinal Surgery, The Affiliated Hospital of Qingdao University, Qingdao 266003, China

Xi’an Jiaotong University, Xi’an 710049, China

Key Laboratory of Biomechanics and Mechanobiology, Ministry of Education, Beijing Advanced Innovation Center for Biomedical Engineering, School of Biological Science and Medical Engineering, Beihang University, Beijing 100191, China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Shandong Province

References

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