Complex lattice occupation of copper leading to enhanced thermoelectric performance in n-type PbSe
Source abstract
Abstract
The existence of Cu interstices and Cu Pb –Cu VF defect pairs results in complex lattice occupations and microstructures in n-type PbSe as well as top-level thermoelectric performance without lattice thermal conductivity anomaly.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Physics of Superconductivity and Magnetism
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
Key Laboratory of High Performance Manufacturing for Aero Engine (MIIT), Northwestern Polytechnical University, Xi'an 710072, China
School of Materials Science and Engineering, Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
Funding
Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China
References (54)
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