Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as a photoelectrode
Source abstract
Abstract
Selective-area Si implantation was performed on the surface of GaN films to form n + -GaN stripes for enhancing the production rate of hydrogen by photolysis of water.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Advanced Photocatalysis Techniques · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Photonics
National Cheng Kung University
Tainan City 70101
Taiwan
Department of Electro-Optical Engineering
Southern Taiwan University of Science and Technology
Tainan City 71001
Funding
Ministry of Science and Technology
References (22)
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