A high interfacial anisotropy of MgO/CoFeB/MgO structures with perpendicular magnetic anisotropy
Source abstract
Abstract
Fabrication and annealing properties of MgO/CoFeB/MgO on its perpendicular magnetic anisotropy (PMA) were evaluated. The double CoFeB-MgO structure was formed by removing the capping Ta layer of the initial Ta/CoFeB/MgO structure, followed by a second MgO layer and a W capping layer deposition. A decrease in magnetization saturation ( M s ) due to the formation of a magnetic dead layer was recovered by annealing at over 250 °C, exceeding the initial M s values. From the CoFeB thickness dependency, 1.8 times higher interfacial anisotropy ( K i ) was obtained with a double CoFeB-MgO interface, thereby preserving perpendicular magnetic anisotropy (PMA) up to a CoFeB thickness of 1.7 nm. A PMA film with a thicker film thickness is advantageous to obtain a high thermal stability (Δ) for scaled non-volatile magnetic memory devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Magnetic Properties and Synthesis of Ferrites · Superconductivity in MgB2 and Alloys
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (46)
Show source-provided references
1. Recalibrating global data center energy-use estimates10.1126/science.aba3758 ↗
2. The growing energy footprint of artificial intelligence10.1016/j.joule.2023.09.004 ↗
3. A novel nonvolatile memory with spin torque transfer magnetization switching : spin-ram
4. Current-induced magnetization reversal in nanopillars with perpendicular anisotropy10.1038/nmat1595 ↗
5. Spin transfer in nanomagnetic devices with perpendicular anisotropy10.1063/1.2198797 ↗
6. Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions10.1143/APEX.1.091301 ↗
7. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
8. Spin-transfer torque magnetoresistive random access memory technology status and future directions10.1038/s44287-024-00111-z ↗
9. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction10.1016/0304-8853(95)90001-2 ↗
10. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions10.1103/PhysRevLett.74.3273 ↗
11. Spin-dependent tunneling conductance of Fe/MgO/Fe sandwiches10.1103/PhysRevB.63.054416 ↗
12. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers10.1038/nmat1256 ↗
13. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions10.1038/nmat1257 ↗
14. 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers10.1109/TMAG.2004.830219 ↗
15. 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions10.1063/1.1871344 ↗
16. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction10.1038/nmat2804 ↗
17. Spin torque switching of perpendicular ta∣CoFeB∣MgO-based magnetic tunnel junctions10.1063/1.3536482 ↗
18. Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications10.1103/RevModPhys.89.025008 ↗
19. 631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions10.1063/5.0145873 ↗
20. Magnetic tunnel junctions for spintronic memories and beyond10.1109/TED.2007.894617 ↗
21. Advances and future prospects of spin-transfer torque random access memory10.1109/TMAG.2010.2042041 ↗
22. Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method10.1063/1.4918682 ↗
23. Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers10.1016/j.actamat.2015.01.022 ↗
24. CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions10.1109/LMAG.2012.2190722 ↗
25. Opposite signs of voltage-induced perpendicular magnetic anisotropy change in CoFeB|MgO junctions with different underlayers10.1063/1.4819199 ↗
26. High thermal stability and low Gilbert damping constant of CoFeB/MgO bilayer with perpendicular magnetic anisotropy by Al capping and rapid thermal annealing
27. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy10.1038/srep05895 ↗
28. Enhancement of perpendicular magnetic anisotropy and transmission of spin-hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures10.1063/1.4866965 ↗
29. Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions10.1063/1.4869152 ↗
30. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron10.1038/nnano.2008.406 ↗
31. Role of an interfacial FeO layer in the electric-field-driven switching of magnetocrystalline anisotropy at the Fe/MgO interface10.1103/PhysRevB.81.220409 ↗
32. High spin torque efficiency of magnetic tunnel junctions with MgO/CoFeB/MgO free layer10.1143/APEX.5.093008 ↗
33. Characterization of growth and crystallization processes in magnetic tunnel junction structure by reflective high-energy electron diffraction10.1063/1.2140612 ↗
34. Annealing effects on structural and transport properties of rf-sputtered magnetic tunnel junctions10.1063/1.2165141 ↗
35. Crystallization of amorphous CoFeB ferromagnetic layers in CoFeB/MgO/CoFeB magnetic tunnel junctions10.1143/JJAP.46.L623 ↗
36. Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films10.1063/1.4906096 ↗
37. Control of crystallization and magnetic properties of CoFeB by boron concentration10.1038/s41598-022-08407-6 ↗
38. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure10.1063/1.4736727 ↗
39. Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction10.1063/1.4771996 ↗
40. Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy
41. Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm10.1063/1.4892924 ↗
42. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications10.1063/1.4870917 ↗
43. Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame10.1038/srep16903 ↗
44. Investigation of electrical properties in double barrier MTJ with perpendicular magnetic anisotropy10.1016/j.jmmm.2025.173348 ↗
45. Magnetic anisotropy in metallic ultrathin films and related experiments on cobalt films10.1063/1.342243 ↗
46. Magnetism control of thin CoFeB layers by ferroelectric polarization