journal article·2026-01

Multi-mode switching by Dzyaloshinskii–Moriya interaction and spin–orbit torque in magnetic tunnel junction

Zhengjie Yan, Min Wang, Zhaohao Wang

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OpenAlex topics: Magnetic properties of thin films · Multiferroics and related materials · Advanced Memory and Neural Computing

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References (48)

Show source-provided references
1. High-speed emerging memories for AI hardware accelerators10.1038/s44287-023-00002-9 ↗
2. SOT-MRAM based analog in-memory computing for DNN inference
3. BEOL compatible high retention perpendicular SOT-MRAM device for SRAM replacement and machine learning
4. Demonstration of 128 Kb SOT-MRAM chip with 5 ns write and 15 ns read speed, high endurance over 10 10 and low ECC-on bit error rate
5. Currents, torques, and polarization factors in magnetic tunnel junctions10.1103/PhysRevB.71.024411 ↗
6. Spin-transfer torque switched magnetic tunnel junction for memory technologies10.1016/j.jmmm.2022.169479 ↗
7. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect
8. Spin and orbital properties of perpendicular magnetic anisotropy for spin-orbit torque material devices10.1016/j.apsusc.2021.148959 ↗
9. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer10.1038/nmat2613 ↗
10. Spin-orbit torques: Materials, mechanisms, performances, and potential applications10.1016/j.pmatsci.2020.100761 ↗
11. Enhanced voltage-controlled magnetic anisotropy and field-free magnetization switching achieved with high work function and opposite spin Hall angles in W/Pt/W SOT tri-layers10.1002/adfm.202416570 ↗
12. First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories
13. Spin-torque switching with the giant spin Hall effect of tantalum10.1126/science.1218197 ↗
14. Field-free spin-orbit torque switching of a perpendicular ferromagnet with Dzyaloshinskii–Moriya interaction10.1063/1.5052194 ↗
15. Magnetization-switching dynamics driven by chiral coupling10.1103/PhysRevApplied.21.024050 ↗
16. Field-free spin–orbit torque perpendicular magnetization switching in ultrathin nanostructures10.1038/s41524-020-0347-0 ↗
17. Theoretical conditions for field-free magnetization switching induced by spin-orbit torque and Dzyaloshinskii–Moriya interaction10.1109/LED.2020.3043293 ↗
18. Spin Hall torque magnetometry of Dzyaloshinskii domain walls10.1103/PhysRevB.90.184427 ↗
19. Multiple modes of perpendicular magnetization switching scheme in single spin–orbit torque device10.1088/1674-1056/ac6ed9 ↗
20. Donahue · 1999
21. Critical current destabilizing perpendicular magnetization by the spin Hall effect10.1103/PhysRevB.92.024428 ↗
22. Oscillatory spin-orbit torque switching induced by field-like torques10.1038/s42005-017-0002-3 ↗
23. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems10.1103/RevModPhys.91.035004 ↗
24. Suppression of the field-like torque for efficient magnetization switching in a spin–orbit ferromagnet10.1038/s41928-020-00500-w ↗
25. Threshold current density for perpendicular magnetization switching through spin-orbit torque10.1103/PhysRevApplied.13.044078 ↗
26. Strong damping-like spin-orbit torque and tunable Dzyaloshinskii–Moriya interaction generated by low-resistivity Pd1-Pt alloys10.1002/adfm.201805822 ↗
27. Spin-torque switching mechanisms of perpendicular magnetic tunnel junction nanopillars10.1063/5.0046596 ↗
28. A spin torque nano oscillator model based on Dzyaloshinskii–Moriya interaction in the IMA/PMA bilayered spin valve nanopillar: Micromagnetic study10.1016/j.physb.2024.415714 ↗
29. Enhanced spin Hall torque efficiency in Pt100- xAlx and Pt100- xHfx alloys arising from the intrinsic spin Hall effect10.1063/1.4953768 ↗
30. Structural and magnetic properties of Pt/Co/Mn-based multilayers
31. Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance10.1063/1.4892824 ↗
32. Large Dzyaloshinskii–Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures
33. Skyrmion confinement in ultrathin film nanostructures in the presence of Dzyaloshinskii–Moriya interaction10.1103/PhysRevB.88.184422 ↗
34. Fast current-induced domain-wall motion controlled by the Rashba effect10.1038/nmat3020 ↗
35. Experimental verification of domain-wall tilting induced by Dzyaloshinskii Moriya interaction in current-driven domain-wall motion10.1016/j.jmmm.2022.169857 ↗
36. Collective coordinate descriptions of magnetic domain wall motion in perpendicularly magnetized nanostructures under the application of in-plane fields10.1016/j.jmmm.2018.07.059 ↗
37. Magnetic domain wall dynamics in the precessional regime: Influence of the Dzyaloshinskii–Moriya interaction10.1103/PhysRevB.104.014405 ↗
38. Domain wall pinning through nanoscale interfacial Dzyaloshinskii–Moriya interaction10.1063/5.0070773 ↗
39. Consequences of the Dzyaloshinskii–Moriya interaction10.1016/j.surfrep.2023.100605 ↗
40. Dynamics of dzyaloshinskii domain walls in ultrathin magnetic films10.1209/0295-5075/100/57002 ↗
41. Current-driven dynamics of chiral ferromagnetic domain walls10.1038/nmat3675 ↗
42. Effect of tailoring interlayer Dzyaloshinskii–Moriya interaction chirality on domain wall propagation10.1063/5.0282006 ↗
43. Scaling study of spin-hall-assisted spin transfer torque driven magnetization switching in the presence of Dzyaloshinskii–Moriya interaction10.1109/TNANO.2017.2754406 ↗
44. Tuning domain wall velocity with Dzyaloshinskii–Moriya interaction10.1063/1.5005798 ↗
45. Cryogenic memory technologies10.1038/s41928-023-00930-2 ↗
46. Cryogenic memory architecture integrating spin Hall effect based magnetic memory and superconductive cryotron devices10.1038/s41598-019-57137-9 ↗
47. MLiM: High-performance magnetic logic in-memory scheme with unipolar switching SOT-MRAM10.1109/TCSI.2023.3254607 ↗
48. U-MRAM: Transistor-less, high-speed (10 ns), low-voltage (0.6 V), field-free unipolar MRAM for high-density data memory