The effect of Mn doping on the electrical and magnetic properties of Cr2Te3 thin films

Mn doped Cr2-xMnxTe3 thin films were prepared by molecular beam epitaxy technology. The effect of Mn doping concentration on the structural, morphological, electrical and magnetic performance of Cr2Te3 thin films were detailed analyzed. By varying the beam current of the Mn source, it is found that Mn can be doped into the Cr2Te3 thin film when the Mn source temperature is lower than 700 ℃, while the Mn tends to bind with Te as MnTe crystals for Mn source temperature higher than 700 ℃. Cr2-xMnxTe3 films all exhibt strong ferromagnetism with a Curie temperature of around 175 K. The magnetization of the films decreases with increasing Mn doping concentration. A notable negative magnetoresistance effect is observed with the highest MR ratio about -60% in the vicinity of the Curie temperature. A clear topological Hall signal was observed in the sample with a Mn source temperature of 700 ℃ at low temperature (2 K). These results imply that the electrical and magnetic properties of Cr2Te3 materials can be effectively controlled by doping to meet the practical needs of different fields.