Controllable pure spin currents in bilayer graphene grown on monolayer Cr2X2Te6 hybrid structures: Layer-dependent magnetism

We investigate the spin transport properties of bilayer graphene grown on a monolayer Cr ₂X ₂Te ₆ hybrid structure. Here, X can be Ge, Si, or Sn, all of which are van der Waals layered materials with magnetic properties. Our results show that the magnetism in bilayer graphene is layer-dependent, affecting the spin-dependent energy gap and Fermi level. Focusing specifically on the X = Ge case, we reveal that pure spin currents can be precisely controlled by applying gate voltage and a perpendicular electric field across the barrier. By varying these parameters, we achieve perfect switching of pure spin current from spin-down to spin-up due to the system’s layer-dependent magnetism. Moreover, due to differing gaps between spin-up and spin-down electrons, spin polarization can sharply jump from 0 % to 100 % with changes in gate voltage. The splitting of spin conductance curves, creating a fully functional spin-filtering junction, is also predicted under a varying perpendicular electric field. This model can be extended to cases where X is Si or Sn due to their similar electronic band structures. Our research demonstrates the potential of bilayer graphene on Cr ₂X ₂Te ₆ hybrid structures, which exhibit distinctive layer-dependent magnetism ideal for spintronic applications.