Magnetic interactions in epitaxial films of Mn5(Ge1−xSix)3/Ge(111) : 55Mn NMR study
Source abstract
Abstract
55Mn NMR experiments have been performed at 4.2 K on a series of Mn5(Ge1−xSix)3 epitaxial films (0⩽x⩽0.55) to investigate changes introduced by silicon when it replaces germanium in a hexagonal Mn5Ge3 crystal lattice. The Si/Ge substitution was found to reduce the magnetic moment on manganese located in the 6 g sublattice creating a new population of manganese atoms with distinctly lower magnetic moment. This effect is attributed to the modified exchange interactions due to a lattice distortion introduced by Si. Interestingly, these modified Mn sites retain the orbital moment practically unaltered. The amount of new manganese environments in the 6 g sublattice coincides with a probability of Mn having two Si neighbors as first neighbors. Mn atoms located in the 4d sublattice are not significantly affected by the Si substitution in the studied concentration range.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and interfaces · Magnetic properties of thin films · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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