Design of small volume and low power consumption logic gates based on 4-terminal multilevel magnetic cell
Source abstract
Abstract
Spintronics is an emerging technology for designing logic circuits. The non-volatile logic based on the magnetic tunnel junction (MTJ) cell is a suitable solution to overcome the leakage power problem, which has become a major obstacle for CMOS technology. Here, we introduce a new style of magnetic gate (mGate) logic, which is built by a four-terminal cell. This cell operated by motion of domain wall that is based on spin transfer torque (STT) in a multi-level cell (MLC) structure. To reduce the complexity, a static circuit with a resistive load in ratioed logic style has been used. The use of MLC Gate logic in the static ratioed logic circuit is a suitable solution to reduce the complexity level of structure and power consumption in logic circuits in the field of spintronics. The performance of different magnetic logic gates have been investigated by simulations. The simulation results show that the MLC Gates offer a smaller area and lower power consumption and lower energy in comparison with the previous mGate and magnetic computing in memory.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
Show source-provided references
1. (Hoefflinger 2011)2-Hoefflinger, B. (2011). ITRS: The international technology roadmap for semiconductors. Chips 2020: a guide to the future of nanoelectronics, Springer: 161-174.10.1007/978-3-642-23096-7_7 ↗
2. Li · 2012
3. Huang, J., et al. (2013). Power devil: tool for power gating strategy selection. Proceedings of the 10th Workshop on Optimizations for DSP and Embedded Systems.10.1145/2443608.2443615 ↗
4. Recovery-driven design: Exploiting error resilience in design of energy-efficient processors10.1109/TCAD.2011.2172610 ↗
5. Zianbetov, E., et al. (2015). Non-volatility for ultra-low power asynchronous circuits in hybrid cmos/magnetic technology. 2015 21st IEEE International Symposium on Asynchronous Circuits and Systems, IEEE.10.1109/ASYNC.2015.27 ↗
6. Electron-magnon scattering in magnetic heterostructures far out of equilibrium10.1103/PhysRevB.92.180412 ↗
7. Magnon-drag thermopower and Nernst coefficient in Fe Co, and Ni10.1103/PhysRevB.94.144407 ↗
8. Novel STT-MTJ device enabling all-metallic logic circuits10.1109/TMAG.2012.2197186 ↗
9. Domain wall depinning from notches using combined in-and out-of-plane magnetic fields10.1063/1.4944698 ↗
10. Multiplexing sense-amplifier-based magnetic flip-flop in a 28-nm FDSOI technology10.1109/TNANO.2015.2438017 ↗
11. Nanospintronics based on magnetologic gates10.1109/TED.2011.2173498 ↗
12. Bromberg, D., et al. (20). Experimental demonstration of four-terminal magnetic logic device with separate read-and write-paths. 20 IEEE International Electron Devices Meeting, IEEE.
13. Design of ultra low power current mode logic gates using magnetic cells
14. Magnetic tunnel junction applications10.3390/s20010121 ↗
15. A novel low power and reduced transistor count magnetic arithmetic logic unit using hybrid STT-MTJ/CMOS circuit10.1109/ACCESS.2019.2963727 ↗
16. All-magnetic magnetoresistive random access memory based on four terminal mCell device10.1063/1.4913279 ↗
17. mGate: A universal magnetologic gate for design of energy efficient digital circuits10.1109/TMAG.2017.2715828 ↗
18. Proposal for energy efficient spin transfer torque-magnetoresistive random access memory device10.1063/5.0052693 ↗
19. Spin-transfer torque switched magnetic tunnel junction for memory technologies10.1016/j.jmmm.2022.169479 ↗
20. Ultra-low power and reliable magnetic based interconnects for nano-scale technologies10.1016/j.mejo.2019.05.011 ↗
21. Memristor ratioed logic crossbar-based delay and jump-key flip-flops design10.1002/cta.3194 ↗
22. Negative capacitance enhanced all spin logic devices with an ultra-low 1 mV working voltage10.1109/JEDS.2018.2793902 ↗
23. Energy-Efficient advanced data encryption system using spin-based Computing-in-Memory architecture10.1109/TED.2022.3150623 ↗
24. Energy-Efficient advanced data encryption system using spin-based Computing-in-Memory architecture10.1109/TED.2022.3150623 ↗
25. MagCiM: A Flexible and Non-Volatile Computing-in-Memory Processor for Energy-Efficient Logic Computation10.1109/ACCESS.2022.3159967 ↗
26. Sekar, D. C. (204). 3D memory with shared lithography steps: The memory industry's plan to “cram more components onto integrated circuits”. 204 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), IEEE.
27. All-spin PUF: An Area-efficient and Reliable PUF Design with Signature Improvement for Spin-transfer Torque Magnetic Cell-based All-spin Circuits10.1145/3517811 ↗