Structure and stripe domain of melt-spun HoMn6Sn6-xGax ribbons

Topological magnetic skyrmions are expected to become a new generation of information carrier units, and exploring new magnetic skyrmion host materials and their magnetic domain structures is critical. This paper prepared HoMn ₆Sn _6-xGa _x ribbons by melt-spinning and annealing and studied the effects of the second phase and doping Ga on the structure and magnetic domain of the ribbons. The results show that doped Ga only replaces the Sn sites in the HoMn ₆Sn ₆ phase, and the maximum substitution rate of Ga in the HoMn ₆Sn ₆ phase is close to 1/6. The unequal substitution of crystal positions causes the lattice to bear considerable compressive stress and negative strain. With an increase in doped Ga content, the lattice constant and cell volume of the HoMn ₆Sn _6-xGa _x phase gradually decrease, and the substitution positions also change from mainly occupying Sn(2c) sites to occupying Sn(2e) and Sn(2d) sites simultaneously. Doping Ga enhances the preferential orientation in the grains, Ga occupying Sn(2d) sites enhances 〈0 0 9〉 orientation, and occupying Sn(2e) sites contributes to the enhancement in 〈2 0 4〉 orientation. Whether doped with Ga or not, the ribbons have stable stripe domains with HoMn ₆Sn ₆ structure. Increasing Ga content from x = 0.3 to x = 1.6 decreases the spin reorientation temperature, Curie temperatures, and the difference between the two temperatures.