journal article·2023-07

Large anomalous Hall magnetoresistance in partially oxidized single GdO layer

Woonjae Won, Jun-Ho Kang, Donghyeon Lee, Nyun Jong Lee, Younghun Jo, Sanghoon Kim, Kab-Jin Kim

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Abstract

This study investigated angular-dependent magnetoresistance in a partially oxidized single GdO x wire, wherein nonmetallic conduction was dominant. The resistivity with magnetic field being parallel ( ρ x ), transverse ( ρ y ), and perpendicular ( ρ z ) to current exhibited a relation of ρ z > ρ x ≈ ρ y , which is in contrast to that in case of conventional magnetoresistances. This unusual angular dependence can be attributed to the anomalous Hall magnetoresistance (AHMR), which is a novel magnetoresistance originating from anomalous Hall effect-induced spin accumulation, subsequent spin backflow, and spin-to-charge conversion, and was recently observed in metallic ferromagnets. The observed AHMR was as large as 1.5% at T = 5 K, which is orders of magnitude larger than that in case of metallic systems. Thus, the findings of this study are expected to motivate the evolution of further theoretical approaches towards a complete understanding of spin-dependent magnetotransport in granular systems.
Source: expertdata · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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