journal article·2002-02

The effect of controlled P1 and P2 in synthetic spin valve with Mn–Ir–Pt exchange biasing layer

D.M. Jeon, J.H. Kim, Y.S. Kim, S.Y. Yoon, D.H. Lee, D.H. Yoon, S.J. Suh

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Abstract

Abstract Synthetic top and bottom spin valves including the Mn–Ir–Pt/Co–Fe (P1)/Ru/Co—Fe (P2) synthetic pinned layer were prepared by controlling the thickness difference (Δ t =P1–P2) of Co–Fe layers. The effective exchange field ( H eff,ex ) and giant magnetoresistance (GMR) properties of both synthetic type SVs were investigated as a function of Δ t . The H eff,ex was dependent largely on the Δ t . The GMR properties are strongly dependent on the stacking sequence of synthetic SVs and Δ t . Based on the magnetic and electrical properties at room temperature, the thermal stability of synthetic SVs was also evaluated at various elevated temperatures in both types of SVs.
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Research context

OpenAlex topics: Magnetic properties of thin films · Copper Interconnects and Reliability · Semiconductor materials and devices

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