Domain wall confinement with thin film edges

Abstract Magnetization distribution has been calculated for nanocontacts consisting of two films contacted at their edges by means of a micromagnetic framework using the Laudau–Lifshitz–Gilbert formula. Two types of junctions, crossing edges (X-type) and overlapped corner (C-type) of films, are considered. In the X-type configuration, the domain wall between two films having head-to-head or tail-to-tail magnetization direction is confined when the film thickness is lowered to 4 nm. If the small-size bridge is introduced to the junction area, the wall confinement is slightly enhanced. On the other hand, for the C-type junction the domain wall width decreases with increasing film thickness. These configurations can be potential candidates for the ballistic magnetoresistance sensor which can be manufactured using thin films.