Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact

Abstract Using conductive atomic force microscopy, we investigated the electrical properties of patterned Co/Cu/Co sub-micron dots which were aligned at 200 nm intervals. As a result, we observed the I – V character having hysteresis behavior; it was apparently due to a magnetization reversal caused by the spin transfer torque. We demonstrated that the probe technique was able to be one of the candidates of the future high-areal-density magnetic recording devices.