journal article·2004-05

Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers

M.A Boselli, I.C.da Cunha Lima, A Ghazali

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Abstract

Abstract The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie–Weiss temperatures calculated for these low-dimensional systems are in the range of 50– 80 K , and the dependence of the transition temperature with the GaAs separation layer is established.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Magnetic properties of thin films · Semiconductor Quantum Structures and Devices

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References (6)

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