journal article·2007-03

Direction dependent giant magnetoresistance of spin valves using epitaxial Cr2O3 as the pinning layer

Joonghoe Dho, Ilsu Rhee, H.-C. Ri, M.G. Blamire

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Abstract

Abstract We report the direction dependent magnetization and the giant magnetoresistance (GMR) data for the spin valves NiFe/Cu/NiFe/Cr 2 O 3 . The sample with the (1 1¯ 0 2) Cr 2 O 3 showed typical spin valve properties after the magnetic field annealing (MFA) parallel to the [1¯ 1 1] direction; the exchange bias of ∼ 7 0 0 Oe and the highly asymmetric GMR effect of ∼ 4 % with the magnetic field sweep. However, the MFA perpendicular to the [1¯ 1 1] direction induced a symmetric GMR effect of ∼ 2.6 % without exchange bias. It is noticeable that the interface exchange coupling constant J by the (1 1¯ 0 2) Cr 2 O 3 is maximally ∼ 0.27 erg / cm 2 . On the other hand, the sample with the (1 0 1¯ 0) Cr 2 O 3 showed no exchange bias in all directions but it displayed a symmetric GMR effect of 1.8–3.5% which was caused by a coercivity difference between two NiFe layers.
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Research context

OpenAlex topics: Multiferroics and related materials · Magnetic properties of thin films · ZnO doping and properties

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