journal article·2001-07

Large magnetoresistance in Ni1–xVxS

P Chen, Y.W Du

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Abstract

Abstract Large magnetoresistance (MR) was observed in Ni1−x VxS(x=0, 0.02, 0.04, 0.06 and 0.08), MR=1530% at 268 K for x=0, MR=1180% at 255 K for x=0.02, MR=980% at 248 K for x=0.04, MR=810% at 224 K for x=0.06 and MR=490% at 198 K for x=0.08 in magnetic field 4 T. The large MR is due to magnetic field-induced magnetic and electrical transition from antiferromagnetic (AFM) nonmetal phase to paramagnetic (PM) metal phase.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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