Spin-polarized electronic transport in a spin-valve based on a quantum dot
Source abstract
Abstract
Electronic transport through a single-level quantum dot coupled to two ferromagnetic leads is studied in the sequential tunneling regime. Transport characteristics are calculated for arbitrary angle between magnetic moments of the electrodes. It is found that the diode feature in the transport characteristics is significantly suppressed for canted magnetic configurations. It is also shown that a small contribution from tunneling processes with simultaneous reversal of electron spin can enhance the TMR effect.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum and electron transport phenomena · Magnetic properties of thin films · Surface and Thin Film Phenomena
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References (3)
Show source-provided references
1. Bułka · Phys. Rev. B · 2000 · 62 · 118610.1103/PhysRevB.62.1186 ↗
2. Rudziński · Phys. Rev. B · 2001 · 64 · 08531810.1103/PhysRevB.64.085318 ↗
3. König · Phys. Rev. Lett. · 2003 · 90 · 166602110.1103/PhysRevLett.90.166602 ↗