Temperature effects in naturally oxidized magnetic tunnel junctions

Abstract For future implementation in high-density magnetic memory, magnetic tunnel junctions with small-resistance–area products are required. In this study, micron-scale, low-resistance, exchange-biased tunnel junctions were achieved by in-situ natural oxidation of thin Al layers. The influence of the oxidation time on the junction properties is discussed. The resistance and magnetoresistance, at low temperature and after anneal at elevated temperature, are interpreted by the competition between spin-dependent and spin-independent tunneling processes in the junction.