Structure-related effects on the domain wall migration in atomic point contacts
Source abstract
Abstract
Abstract We investigate the interplay between magnetic and structural dynamics in magnetic point contacts under current-carrying conditions. In particular we address the dependence of the results upon the specific parameterization of the elastic properties of the material. Our analysis shows a strong influence of the structural relaxation on the energy barrier for domain wall migration, but a negligible dependence of the mechanical properties on the magnetic state. These results are stable against the various material specific choices of parameters describing different transition metals.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Magnetic properties of thin films · Semiconductor materials and devices
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References (4)
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2. Rocha · Phys. Rev. B · 2004 · 70 · 09440610.1103/PhysRevB.70.094406 ↗
3. Stamenova · Phys. Rev. B · 2005 · 72 · 13440710.1103/PhysRevB.72.134407 ↗
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