Programming current reduction by new protruding yoke wire and its optimization considering MTJ magnetization process

Abstract A new protruding yoke wire was proposed and investigated for reduction of programming current of magnetic random access memory (MRAM). By optimization of the overall design of the yoke wires and magnetic tunneling junctions (MTJs) considering the MTJ switching mechanism, the programming current was successfully reduced for not only the conventional MTJ but also our previously proposed uniquely shaped MTJ, which kept the good asteroid curves, owing to the protruding yoke wire.