Hall effect in URh2Ge2−Sn

Abstract We present Hall effect measurements on polycrystalline URh 2 Ge 2− x Sn x at temperatures ranging from 5 to 20 K . The temperature dependence of the Hall constant R H is governed by the susceptibility, with R H =R 0 +χ R S . From our data we estimate the carrier density to the order of two electrons per unit cell for all samples. Such metallic carrier densities disprove gap scenarios to account for the unusual resistive behavior of the compounds.