Influence of growth temperature on the easy magnetization axis switch and domain structure in /(100) structures

Abstract Dependence of the easy magnetization axis switch (EMAS) and domain structure in Fe films grown on GaAs (1 0 0) substrates on the growth temperature and deposition rate was investigated. It was found that the EMAS can be observed at substrate temperature less than 140°C. The thickness of “switched” film nonmonotonically depends on the deposition rate. Domain structures in Fe/GaAs (1 0 0) films are discussed.