Tunnel magnetoresistance in trilayer junctions from first principles: Cr doped GaN/AlN/GaN (0001)

X.Y. Cui; B. Delley; A.J. Freeman; C. Stampfl

doi:10.1016/j.jmmm.2009.09.060

journal article·2010-02

Tunnel magnetoresistance in trilayer junctions from first principles: Cr doped GaN/AlN/GaN (0001)

X.Y. Cui, B. Delley, A.J. Freeman, C. Stampfl

Journal of Magnetism and Magnetic Materials· Volume 322· Issue 4

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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials

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References (33)

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4. SP is determined by the density of states, n, at the Fermi energy, EF, of the two spin channels, namely, SP=[n↑(EF)-n↓(EF)]/[n↑(EF)+n↓(EF)].

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33. Due to the asymmetric nature of the two interfaces, we take the smaller calculated absolute values of SP for P and AP orientations. The TMR ratio is then calculated as [SPA×SPB]/[1-SPA×SPB].