ESR spectra of Eu2+ centers in defect Ga2S3 single crystals

Abstract In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu 2+ centers in defect Ga 2 S 3 single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity 151 Eu atoms in Ga 2 S 3 :Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga 2 S 3 single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu 2+ (4f 7 ) ion with spin S=7/2, g =4.18±0.02 and concentration of the states of Eu N =6.3×10 14 cm −3 .