Domain-wall resistance at low temperature
Source abstract
Abstract
Abstract The physical origin of domain-wall resistance in thin films at low temperature is still unclear. In order to distinguish between spin-dependent phenomena and effects of the Lorentz force as origin of low-temperature domain-wall resistance, a dedicated experiment was developed. Additionally, models of ballistic transport in thin films with surface scattering and domain structure are discussed. As a result, at least part of the observed domain-wall resistance at low temperature can be attributed to surface scattering.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Magnetic properties of thin films · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (8)
Show source-provided references
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