Direct observation of electroluminescence properties on magnetoresistive switch effect in Au/GaAs junctions

Abstract Magnetic-field-dependent avalanche breakdown was observed and the electroluminescence (EL) accompanying by the breakdown was investigated in a metal–insulator–metal device consisting of Au/GaAs junctions. The peak energy of the EL is approximately 1.4 eV at room temperature. Direct observation of EL emission shows that the light emission occurred at the edge and under the electrodes. These results indicate that electrons and holes, which contribute transport, exist inside of the GaAs substrate. The dominant charge transport occurs not on the surface but in the bulk region of GaAs.