Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions
Source abstract
Abstract
Abstract Ferromagnetic amorphous Ni 16 Fe 62 Si 8 B 14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Metallic Glasses and Amorphous Alloys · Magnetic Properties and Applications
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References (6)
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