Influence of material anisotropy in the switching toggle mode in MRAM devices

Abstract In the development of magneto-resistance random access memory (MRAM), the theoretical studies are now concentrated in various parameters improving. Some important parameters are the range of the operating field and the switching time. The analysis presented in this paper is concentrated to a synthetic antiferromagnet (SAF). Recently a considerable effort has been expended by Fujiwara and co-workers to the analysis of the switching mode suggested by Savtchenko et al., called also toggle MRAM, and a number of conditions were found to maximize the operating field margin; most of these studies were based on a critical-curve approach. For uniaxial anisotropy, an analytical approach is possible and simple results and critical curves are presented. For the more general case, only the micromagnetic simulation can offer results. The studies are made for different coupling constants between the two ferromagnetic layers and the results are discussed.