Room temperature magnetoresistance effect observed in Au/GaAs films processed by focused ion beam

Abstract Huge magnetoresistance (MR) effect was observed in Au/GaAs films with a nano-size trench fabricated by a focused ion beam process. Positive MR effect with the ratio of 32,000% was obtained in the magnetic field of 15,000 Oe at room temperature. This huge MR effect is promising for the application to spintronic devices such as magnetic sensors.