Magnetoresistance effect in asymmetric dual spin-valves—a device for three-state logic

Abstract We show that for asymmetric dual spin-valves MnIr/CoFe1/Cu/Py1/Cu/Py2/CoFe2/MnIr (Py denotes Ni 80 Fe 20 Permalloy alloy), the application of two different ferromagnetic materials as pinned layers can result in appearance of three well-separated stages in giant magnetoresistance (GMR) effect reflecting three different and almost independent magnetization reversal processes. For the correct choice of the constituent layer thicknesses, the GMR amplitude of the dual spin-valve can depend on the field sweep direction.