Magnetic and electrical properties of amorphous Ge1−Cr thin films grown by low temperature vapor deposition

Abstract Amorphous Ge 1− x Cr x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10 −3 –0.96×10 2 Ω cm at 300 K, and decrease with Cr concentration. The Ge 1− x Cr x thin films are p-type. The hole concentrations are 5×10 16 –7×10 21 cm −3 at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm 3 at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge 1− x Cr x thin films are paramagnetic.